document number: 65268 www.vishay.com s09-1473-rev. a, 10-aug-09 1 automotive p-channel - 40 v (d-s) 175 c mosfet sqm110p04-04l vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? package with low thermal resistance ? aec-q101 qualified d ? compliant to rohs directive 2002/95/ec ? find out more about vishay?s automotive grade product requirements at: www.vishay.com/applications notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) - 40 r ds(on) ( ) at v gs = 10 v 0.0038 r ds(on) ( ) at v gs = 4.5 v 0.0060 i d (a) 120 configuration single s g d p-channel mosfet to-263 s d g top v ie w ordering information package to-263 lead (pb)-free and halogen-free SQM110P04-04L-GE3 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d - 120 a t c = 125 c - 102 continuous source current (diode conduction) a i s - 120 pulsed drain current b i dm - 240 single pulse avalanche energy l = 0.1 mh e as 320 mj single pulse avalanche current i as - 80 a maximum power dissipation b t c = 25 c p d 375 w t a = 25 c 3.75 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case (drain) r thjc 0.40
www.vishay.com document number: 65268 2 s09-1473-rev. a, 10-aug-09 sqm110p04-04l vishay siliconix notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t c = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = - 40 v - - - 1.0 a v gs = 0 v v ds = - 40 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 40 v, t j = 175 c - - - 250 on-state drain current a i d(on) v gs = - 10 v v ds - 5 v - 120 - - a drain-source on-state resistance a r ds(on) v gs = - 10 v i d = - 30 a - 0.0035 0.0038 v gs = - 10 v i d = - 30 a, t j = 125 c - - 0.0065 v gs = - 10 v i d = - 30 a, t j = 175 c - - 0.0075 v gs = - 4.5 v i d = - 20 a - 0.0050 0.0060 forward transconductance a g fs v ds = - 15 v, i d = - 30 a 20 - - s dynamic b input capacitance c iss v gs = 0 v v ds = - 25 v, f = 1 mhz - 11 200 - pf output capacitance c oss - 1650 - reverse transfer capacitance c rss - 1200 - total gate charge c q g v gs = - 10 v v ds = - 30 v, i d = - 110 a - 235 - nc gate-source charge c q gs -45- gate-drain charge c q gd -65- turn-on delay time c t d(on) v dd = - 30 v, r l = 0.35 i d ? - 110 a, v gen = - 10 v, r g = 2.5 -25- ns rise time c t r -30- turn-off delay time c t d(off) - 190 - fall time c t f - 110 - source-drain diode ratings and characteristics t c = 25 c b pulsed current a i sm - - 300 a forward voltage v sd i f = 120 a, v gs = 0 v - 1.1 1.4 v
document number: 65268 www.vishay.com s09-1473-rev. a, 10-aug-09 3 sqm110p04-04l vishay siliconix typical characteristics t a = 25 c, unless otherwise noted output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 40 80 120 160 200 240 0246810 v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 10 v thru 5 v 3 v 4 v 0 40 80 120 160 200 240 0 153045607590 i d - drain current (a) - transconductance (s) g fs 125 c t c = - 55 c 25 c 0 2000 4000 6000 8000 10 000 12 000 14 000 0 5 10 15 20 25 30 35 40 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss 0 25 50 75 100 125 150 175 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs - gate-to-source voltage (v) - drain current (a) i d 25 c - 55 c t c = 125 c 0.000 0.002 0.004 0.006 0.008 0 . 010 0 2 0 4 0 6 0 8 0 100 120 - on-resistance ( ) i d - drain current (a) r ds(on) v gs = 10 v v gs = 4.5 v 0 4 8 12 16 20 0 50 100 150 200 250 300 350 400 450 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 20 v i d = 110 a
www.vishay.com document number: 65268 4 s09-1473-rev. a, 10-aug-09 sqm110p04-04l vishay siliconix typical characteristics t a = 25 c, unless otherwise noted on-resistance vs. junction temperature avalanche current vs. time source drain diode forward voltage drain source breakdown vs. junction temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) v gs = 10 v i d = 30 a r ds(on) - on-resistance (normalized) t in (s) 1000 10 0.0001 0.01 1 1 0 100 (a) i dav 0.1 0.001 i av (a) at t a = 25 c i av (a) at t a = 150 c 1 0.1 0.0 0.3 0.6 0.9 1.2 v sd - source-to-drain voltage (v) i s - source current (a) 100 10 1 t j = 25 c t j = 150 c 38 40 42 44 46 48 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) (v) v ds i d = 250 a
document number: 65268 www.vishay.com s09-1473-rev. a, 10-aug-09 5 sqm110p04-04l vishay siliconix thermal ratings t a = 25 c, unless otherwise noted maximum drain current vs. ambient temperature safe operating area normalized thermal transient impedance, junction-to-case note the characteristics shown in t he graph. normalized transient thermal impedance ju nction to case (25 c) are given for general g uidelines only to enable the user to get a ?bal l park? indication of par t capabilities. the data ar e extracted from singl e pulse transient the rmal impedance characteristics which are developed from empirical measurements. the latter is va lid for the part mounted on printed circuit bo ard - fr4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. the part capabilities can widely vary depending on actua l application parameters and operating conditions. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65268 . 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 t c - case temperature (c) - drain current (a) i d limited by package 1000 1 0.1 1 10 100 0.1 10 - drain current (a) i d 1 ms 10 s 100 s t c = 25 c single pulse 100 ms dc 10 ms 100 v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified limited by r ds(on) * square wave pulse duration (s) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 normalized eff ective transient thermal impedance 1 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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